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PSMN011-60MLX
Power MOSFET, N Channel, 60 V, 61 A, 9100 µohm, LFPAK33, Surface Mount
可供訂購
製造商標準交貨時間：15 週
有貨時通知我
包裝選項
| 包裝類型 | 數量 | 單價: | 總計 |
|---|---|---|---|
| 條帶式包裝 | 1 | NT$52.480 | NT$52.48 |
| 總計 價格 | NT$52.48 | ||
條帶式包裝 & 複捲式
| 數量 | 價格 |
|---|---|
| 1+ | NT$52.480 |
| 10+ | NT$32.820 |
| 100+ | NT$21.590 |
| 500+ | NT$16.730 |
| 1000+ | NT$14.380 |
| 5000+ | NT$11.870 |
品項附註
僅針對此訂單新增至訂單確認、發票和出貨備註。
產品訊息
製造商NEXPERIA
製造商產品編號PSMN011-60MLX复制
製造商標準前置時間15 週
訂購代碼
複捲式3440087RL
條帶式包裝3440087
技術資料表
Channel TypeN Channel
Drain Source Voltage Vds60V
Continuous Drain Current Id61A
Drain Source On State Resistance9100µohm
Transistor Case StyleLFPAK33
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max1.7V
Power Dissipation91W
No. of Pins4Pins
Operating Temperature Max175°C
Product Range-
Qualification-
SVHCLead (25-Jun-2025)
產品總覽
PSMN011-60MLX is a logic level enhancement mode N-channel MOSFET in the LFPAK33 package. This product is designed and qualified for use in a wide range of industrial, communications, and domestic equipment. The applications include AC-to-DC converters, synchronous rectification, and DC-DC converters.
- High efficiency due to low switching and conduction losses
- Suitable for standard level gate drive sources
- LFPAK33 package is footprint compatible with other 3.3mm types, qualified to 175°C
- Drain-source voltage is 60V max (Tj = 25°C), drain current is 61A max (VGS = 10V; Tmb = 25°C)
- Total power dissipation is 91W max (Tmb = 25°C)
- Drain-source on-state resistance is 9.35mohm typ (VGS = 10V; ID = 15A; Tj = 25°C)
- Gate-drain charge is 5.1nC typ (VGS = 4.5V; ID = 15A; VDS = 30V; Tj = 25°C)
- Peak drain current is 91W max (Tmb = 25°C)
- Source current is 70A max (Tmb = 25°C)
- 4 leads SOT1210 package, junction temperature range from -55 to 175°C
技術規格
Channel Type
N Channel
Continuous Drain Current Id
61A
Transistor Case Style
LFPAK33
Rds(on) Test Voltage
10V
Power Dissipation
91W
Operating Temperature Max
175°C
Qualification
-
SVHC
Lead (25-Jun-2025)
Drain Source Voltage Vds
60V
Drain Source On State Resistance
9100µohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
1.7V
No. of Pins
4Pins
Product Range
-
MSL
MSL 1 - Unlimited
技術文件 (1)
法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:Lead (25-Jun-2025)
下載產品合規憑證
產品合規憑證
重量 (公斤)：.00001