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PSMN4R0-30YLDX
Power MOSFET, N Channel, 30 V, 95 A, 3400 µohm, SOT-669, Surface Mount
5 有存貨
需要更多？
5 件可于 3-4 個工作日後配送(英國 件庫存)
包裝選項
| 包裝類型 | 數量 | 單價: | 總計 |
|---|---|---|---|
| 條帶式包裝 | 1 | NT$35.260 | NT$35.26 |
| 總計 價格 | NT$35.26 | ||
條帶式包裝 & 複捲式
| 數量 | 價格 |
|---|---|
| 1+ | NT$35.260 |
| 10+ | NT$19.210 |
| 50+ | NT$17.660 |
| 200+ | NT$16.110 |
| 500+ | NT$12.230 |
品項附註
僅針對此訂單新增至訂單確認、發票和出貨備註。
產品訊息
製造商NEXPERIA
製造商產品編號PSMN4R0-30YLDX复制
製造商標準前置時間18 週
訂購代碼
複捲式2449092RL
條帶式包裝2449092
技術資料表
Channel TypeN Channel
Drain Source Voltage Vds30V
Continuous Drain Current Id95A
Drain Source On State Resistance3400µohm
Transistor Case StyleSOT-669
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max1.74V
Power Dissipation64W
No. of Pins4Pins
Operating Temperature Max175°C
Product Range-
Qualification-
SVHCLead (25-Jun-2025)
產品總覽
The PSMN4R0-30YLD is a N-channel enhancement-mode logic level gate drive MOSFET optimised for 4.5V gate drive. NextPowerS3 portfolio utilising NXP's unique SchottkyPlus technology delivers high efficiency, low spiking performance usually associated with MOSFETs with an integrated Schottky or Schottky-like diode but without problematic high leakage current. NextPowerS3 is particularly suited to high efficiency applications at high switching frequencies.
- Ultra-low QG, QGD and QOSS for high system efficiency, especially at higher switching frequencies
- Superfast switching with soft-recovery (s-factor<gt/>1)
- Low spiking and ringing for low EMI designs
- Unique SchottkyPlus technology
- Schottky-like performance with <lt/>1µA leakage at 25°C
- Low parasitic inductance and resistance
- High reliability clip bonded and solder die attach power SO8 package
- No glue, no wire bonds, qualified to 175°C
- Wave solderable, exposed leads for optimal visual solder inspection
- -55 to 175°C Junction temperature range
應用
Power Management, Communications & Networking, Computers & Computer Peripherals, Motor Drive & Control, Multimedia, Industrial
技術規格
Channel Type
N Channel
Continuous Drain Current Id
95A
Transistor Case Style
SOT-669
Rds(on) Test Voltage
10V
Power Dissipation
64W
Operating Temperature Max
175°C
Qualification
-
SVHC
Lead (25-Jun-2025)
Drain Source Voltage Vds
30V
Drain Source On State Resistance
3400µohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
1.74V
No. of Pins
4Pins
Product Range
-
MSL
MSL 1 - Unlimited
法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：Thailand
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：Thailand
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:Lead (25-Jun-2025)
下載產品合規憑證
產品合規憑證
重量 (公斤)：.00001