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PSMN4R0-40YS,115
Power MOSFET, N Channel, 40 V, 100 A, 4200 µohm, SOT-669, Surface Mount
產品訊息
製造商NEXPERIA
製造商產品編號PSMN4R0-40YS,115
訂購代碼1785637
技術資料表
Channel TypeN Channel
Drain Source Voltage Vds40V
Continuous Drain Current Id100A
Drain Source On State Resistance4200µohm
Transistor Case StyleSOT-669
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max3V
Power Dissipation106W
No. of Pins4Pins
Operating Temperature Max175°C
Product Range-
Qualification-
SVHCLead (25-Jun-2025)
產品總覽
The PSMN4R0-40YS is a N-channel standard level MOSFET with advanced TrenchMOS technology provides low RDS (ON) and low gate charge. It is designed and qualified for use in a wide range of DC-to-DC convertor, lithium-ion battery protection, load switching, server power supplies and domestic equipment applications.
- Improved mechanical and thermal characteristics
- High efficiency gains in switching power converters
- LFPAK provides maximum power density in a power SO8 package
- -55 to 175°C Junction temperature range
應用
Power Management, Communications & Networking, Consumer Electronics, Motor Drive & Control, Industrial
技術規格
Channel Type
N Channel
Continuous Drain Current Id
100A
Transistor Case Style
SOT-669
Rds(on) Test Voltage
10V
Power Dissipation
106W
Operating Temperature Max
175°C
Qualification
-
SVHC
Lead (25-Jun-2025)
Drain Source Voltage Vds
40V
Drain Source On State Resistance
4200µohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
3V
No. of Pins
4Pins
Product Range
-
MSL
MSL 1 - Unlimited
PSMN4R0-40YS,115 的替代選擇
找到 8 個產品
法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：Philippines
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：Philippines
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：Y-Ex
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:Lead (25-Jun-2025)
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產品合規憑證
重量 (公斤)：.001527