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| 數量 | 價格 |
|---|---|
| 1+ | NT$38.170 |
| 10+ | NT$24.930 |
| 100+ | NT$16.350 |
| 500+ | NT$11.690 |
| 1000+ | NT$11.440 |
| 5000+ | NT$11.190 |
價格Each
最少: 1
多項: 1
NT$38.17
品項附註
僅針對此訂單新增至訂單確認、發票和出貨備註。
產品訊息
製造商NEXPERIA
製造商產品編號PSMN6R0-30YLB,115复制
製造商標準前置時間15 週
訂購代碼2067550
技術資料表
Channel TypeN Channel
Drain Source Voltage Vds30V
Continuous Drain Current Id71A
Drain Source On State Resistance5500µohm
Transistor Case StyleSC-100
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max1.48V
Power Dissipation58W
No. of Pins4Pins
Operating Temperature Max175°C
Product Range-
Qualification-
SVHCLead (25-Jun-2025)
產品總覽
The PSMN6R0-30YLB is a N-channel enhancement-mode logic level MOSFET optimised for 4.5V gate drive utilising NextPower Superjunction technology. It is designed and qualified for use in a wide range of DC-to-DC converters, Load switching, synchronous buck regulator and domestic equipment applications.
- Low parasitic inductance and resistance
- Ultra-low QG, QGD and QOSS for high system efficiencies at low and high loads
- -55 to 175°C Junction temperature range
應用
Power Management, Communications & Networking, Consumer Electronics, Industrial
技術規格
Channel Type
N Channel
Continuous Drain Current Id
71A
Transistor Case Style
SC-100
Rds(on) Test Voltage
10V
Power Dissipation
58W
Operating Temperature Max
175°C
Qualification
-
SVHC
Lead (25-Jun-2025)
Drain Source Voltage Vds
30V
Drain Source On State Resistance
5500µohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
1.48V
No. of Pins
4Pins
Product Range
-
MSL
MSL 1 - Unlimited
PSMN6R0-30YLB,115 的替代選擇
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法規與環境保護
原產地:
承擔產品生產最後程序之國家原產地:Philippines
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地:Philippines
承擔產品生產最後程序之國家
關稅編號:85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定:Y-Ex
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:Lead (25-Jun-2025)
下載產品合規憑證
產品合規憑證
重量 (公斤):.000071
