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BFG540W/X
Bipolar - RF Transistor, NPN, 15 V, 9 GHz, 500 mW, 120 mA, SOT-343
不再生產
包裝選項
產品訊息
製造商NXP
製造商產品編號BFG540W/X复制
訂購代碼
複捲式1349659RL
條帶式包裝1349659
技術資料表
Transistor PolarityNPN
Collector Emitter Voltage Max15V
Power Dissipation500mW
Continuous Collector Current120mA
Transistor Case StyleSOT-343
No. of Pins4Pins
DC Current Gain hFE Min120hFE
Transistor MountingSurface Mount
Operating Temperature Max150°C
Product Range-
Qualification-
產品總覽
The BFG540W/X is a NPN silicon epitaxial planar Wideband Transistor encapsulated in a plastic package. The device is intended for RF front end wideband applications in the GHz range, such as analogue and digital cellular telephones, cordless telephones (CT2, CT3, PCN, DECT), radar detectors, pagers, satellite television tuners (SATV), MATV/CATV amplifiers and repeater amplifiers in fibre-optic systems.
- High power gain
- Low noise figure
- High transition frequency
- Gold metallization ensures excellent reliability
應用
Industrial, RF Communications, Communications & Networking, Fibre Optics, Power Management
技術規格
Transistor Polarity
NPN
Power Dissipation
500mW
Transistor Case Style
SOT-343
DC Current Gain hFE Min
120hFE
Operating Temperature Max
150°C
Qualification
-
Collector Emitter Voltage Max
15V
Continuous Collector Current
120mA
No. of Pins
4Pins
Transistor Mounting
Surface Mount
Product Range
-
技術文件 (1)
相關產品
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法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：Hong Kong
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：Hong Kong
承擔產品生產最後程序之國家
關稅編號：85412100
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
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重量 (公斤)：.001