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MRFE6VP5150GNR1
RF FET Transistor, LDMOS, 139 V, 952 W, 1.8 MHz, 600 MHz, TO-270WBG
无库存
產品訊息
製造商NXP
製造商產品編號MRFE6VP5150GNR1
訂購代碼2985235
技術資料表
Drain Source Voltage Vds139V
Continuous Drain Current Id-
Power Dissipation952W
Operating Frequency Min1.8MHz
Operating Frequency Max600MHz
Transistor Case StyleTO-270WBG
No. of Pins4Pins
Operating Temperature Max225°C
Channel TypeN Channel
Transistor MountingSurface Mount
Product Range-
SVHCNo SVHC (27-Jun-2024)
產品總覽
- RF power LDMOS transistor
- Wide operating frequency range from 1.8 to 600MHz
- Unmatched input and output allowing wide frequency range utilization
- Integrated ESD protection circuitry
- Integrated stability enhancements
- Low thermal resistance
- High ruggedness N-channel enhancement mode lateral MOSFET
警告
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
技術規格
Drain Source Voltage Vds
139V
Power Dissipation
952W
Operating Frequency Max
600MHz
No. of Pins
4Pins
Channel Type
N Channel
Product Range
-
SVHC
No SVHC (27-Jun-2024)
Continuous Drain Current Id
-
Operating Frequency Min
1.8MHz
Transistor Case Style
TO-270WBG
Operating Temperature Max
225°C
Transistor Mounting
Surface Mount
MSL
MSL 3 - 168 hours
法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：Malaysia
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：Malaysia
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (27-Jun-2024)
下載產品合規憑證
產品合規憑證
重量 (公斤)：.007749