列印頁面
MRFE6VS25NR1
RF FET Transistor, 133 VDC, 1.8 MHz, 2000 MHz, TO-270
不再生產
產品訊息
製造商NXP
製造商產品編號MRFE6VS25NR1复制
訂購代碼2776252
技術資料表
Drain Source Voltage Vds133VDC
Continuous Drain Current Id-
Power Dissipation-
Operating Frequency Min1.8MHz
Operating Frequency Max2000MHz
Transistor Case StyleTO-270
No. of Pins2Pins
Operating Temperature Max225°C
Channel TypeN Channel
Transistor MountingFlange
Product Range-
SVHCNo SVHC (27-Jun-2018)
產品總覽
The MRFE6VS25NR1 is a N-channel RF Power LDMOS Transistor designed for both narrowband and broadband ISM, broadcast and aerospace applications operating at frequencies from 1.8 to 2000MHz. It is fabricated using enhanced ruggedness platform and is suitable for use in applications where high VSWRs are encountered.
- High ruggedness
- Enhancement-mode lateral MOSFET
- Wide operating frequency range
- Extreme ruggedness
- Unmatched, capable of very broadband operation
- Integrated stability enhancements
- Low thermal resistance
- Extended ESD protection circuit
技術規格
Drain Source Voltage Vds
133VDC
Power Dissipation
-
Operating Frequency Max
2000MHz
No. of Pins
2Pins
Channel Type
N Channel
Product Range
-
SVHC
No SVHC (27-Jun-2018)
Continuous Drain Current Id
-
Operating Frequency Min
1.8MHz
Transistor Case Style
TO-270
Operating Temperature Max
225°C
Transistor Mounting
Flange
MSL
MSL 3 - 168 hours
法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：Malaysia
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：Malaysia
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (27-Jun-2018)
下載產品合規憑證
產品合規憑證
重量 (公斤)：.0003