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MRFX1K80NR5
RF FET Transistor, 179 V, 3.333 kW, 1.8 MHz, 400 MHz, OM-1230
27 有存貨
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27 件可于 3-4 個工作日後配送(英國 件庫存)
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| 數量 | 價格 |
|---|---|
| 1+ | NT$30,464.220 |
價格Each (Supplied on Cut Tape)
最少: 1
多項: 1
NT$30,464.22
品項附註
僅針對此訂單新增至訂單確認、發票和出貨備註。
產品訊息
製造商NXP
製造商產品編號MRFX1K80NR5复制
製造商標準前置時間51 週
訂購代碼2985306
技術資料表
Drain Source Voltage Vds179V
Continuous Drain Current Id-
Power Dissipation3.333kW
Operating Frequency Min1.8MHz
Operating Frequency Max400MHz
Transistor Case StyleOM-1230
No. of Pins4Pins
Operating Temperature Max225°C
Channel TypeN Channel
Transistor MountingFlange
Product Range-
SVHCNo SVHC (27-Jun-2024)
產品總覽
MRFX1K80NR5 is a wideband RF Power LDMOS transistor in a 4 pin OM-1230 package. This high ruggedness device is designed for use in high VSWR industrial, medical, broadcast, aerospace and mobile radio applications. Their unmatched input and output design supports frequency use from 1.8 to 400MHz.
- Unmatched input and output allowing wide frequency range utilization
- Device can be used single ended or in a push pull configuration
- Qualified up to a maximum of 65VDD operation
- Characterized from 30 to 65V for extended power range
- Lower thermal resistance package
- High breakdown voltage for enhanced reliability
- Suitable for linear application with appropriate biasing
- Integrated ESD protection with greater negative gate-source voltage for improved Class C operation
技術規格
Drain Source Voltage Vds
179V
Power Dissipation
3.333kW
Operating Frequency Max
400MHz
No. of Pins
4Pins
Channel Type
N Channel
Product Range
-
SVHC
No SVHC (27-Jun-2024)
Continuous Drain Current Id
-
Operating Frequency Min
1.8MHz
Transistor Case Style
OM-1230
Operating Temperature Max
225°C
Transistor Mounting
Flange
MSL
MSL 3 - 168 hours
法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：Malaysia
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：Malaysia
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (27-Jun-2024)
下載產品合規憑證
產品合規憑證
重量 (公斤)：.009072