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2N7000-D26Z
Power MOSFET, N Channel, 60 V, 200 mA, 5 ohm, TO-92, Through Hole
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4,028 件可于 3-4 個工作日後配送(英國 件庫存)
1,581 件可于 4-5 個工作日後配送(美國 件庫存)
包裝選項
| 包裝類型 | 數量 | 單價: | 總計 |
|---|---|---|---|
| 條帶式包裝 | 5 | NT$13.220 | NT$66.10 |
| 總計 價格 | NT$66.10 | ||
條帶式包裝
| 數量 | 價格 |
|---|---|
| 5+ | NT$13.220 |
| 50+ | NT$10.830 |
| 100+ | NT$8.430 |
| 500+ | NT$6.380 |
| 1000+ | NT$6.250 |
整卷
| 數量 | 價格 |
|---|---|
| 2000+ | NT$6.010 |
| 6000+ | NT$5.890 |
品項附註
僅針對此訂單新增至訂單確認、發票和出貨備註。
產品訊息
製造商ONSEMI
製造商產品編號2N7000-D26Z复制
製造商標準前置時間22 週
訂購代碼
整卷2438127
條帶式包裝1467958
技術資料表
Channel TypeN Channel
Drain Source Voltage Vds60V
Continuous Drain Current Id200mA
Drain Source On State Resistance5ohm
Transistor Case StyleTO-92
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2.1V
Power Dissipation400mW
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
SVHCNo SVHC (25-Jun-2025)
產品總覽
The 2N7000_D26Z is a 60V N-channel enhancement mode Field Effect Transistor produced using high cell density, DMOS technology. It has been designed to minimize on-state resistance while providing rugged, reliable and fast switching performance. This can be used in most applications requiring up to 400mA DC and can deliver pulsed currents up to 2A. This product is particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers and other switching applications. This product is general usage and suitable for many different applications.
- High density cell design for extremely low RDS (ON)
- Voltage controlled small signal switch
- Rugged and reliable
- High saturation current capability
- 60V drain gate voltage (VDGR)
- ±20V continuous gate source voltage (VGSS)
- 312.5°C/W Thermal resistance, junction to ambient
技術規格
Channel Type
N Channel
Continuous Drain Current Id
200mA
Transistor Case Style
TO-92
Rds(on) Test Voltage
10V
Power Dissipation
400mW
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Drain Source Voltage Vds
60V
Drain Source On State Resistance
5ohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
2.1V
No. of Pins
3Pins
Product Range
-
MSL
-
2N7000-D26Z 的替代選擇
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法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (25-Jun-2025)
下載產品合規憑證
產品合規憑證
重量 (公斤)：.000515