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BC847BPDW1T1G
Bipolar - RF Transistor, NPN, PNP, 45 V, 100 MHz, 380 mW, 100 mA, SOT-363
58,733 有存貨
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58733 件可于 3-4 個工作日後配送(英國 件庫存)
| 數量 | 價格 |
|---|---|
| 5+ | NT$3.690 |
| 50+ | NT$3.010 |
| 100+ | NT$2.310 |
| 500+ | NT$1.490 |
| 1500+ | NT$1.460 |
價格Each (Supplied on Cut Tape)
最少: 5
多項: 5
NT$18.45
品項附註
僅針對此訂單新增至訂單確認、發票和出貨備註。
產品訊息
製造商ONSEMI
製造商產品編號BC847BPDW1T1G
訂購代碼1653701
技術資料表
Transistor PolarityNPN, PNP
Collector Emitter Voltage Max45V
Transition Frequency100MHz
Power Dissipation380mW
Continuous Collector Current100mA
Transistor Case StyleSOT-363
No. of Pins3Pins
DC Current Gain hFE Min200hFE
Transistor MountingSurface Mount
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (25-Jun-2025)
產品總覽
The BC847BPDW1T1G is a NPN-PNP dual General Purpose Transistor designed for general purpose amplifier applications. It is housed in a surface-mount package for low power applications.
應用
Industrial, Power Management
技術規格
Transistor Polarity
NPN, PNP
Transition Frequency
100MHz
Continuous Collector Current
100mA
No. of Pins
3Pins
Transistor Mounting
Surface Mount
Product Range
-
MSL
MSL 1 - Unlimited
Collector Emitter Voltage Max
45V
Power Dissipation
380mW
Transistor Case Style
SOT-363
DC Current Gain hFE Min
200hFE
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
BC847BPDW1T1G 的替代選擇
找到 2 個產品
法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
關稅編號：85412100
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (25-Jun-2025)
下載產品合規憑證
產品合規憑證
重量 (公斤)：.09