列印頁面
BD137G
Bipolar (BJT) Single Transistor, General Purpose, NPN, 60 V, 1.5 A, 65 W, TO-225AA, Through Hole
585 有存貨
500 即日起您可預購補貨
585 件可于 3-4 個工作日後配送(英國 件庫存)
| 數量 | 價格 |
|---|---|
| 1+ | NT$38.000 |
| 10+ | NT$16.370 |
| 100+ | NT$12.310 |
| 500+ | NT$9.540 |
| 1000+ | NT$9.350 |
| 5000+ | NT$9.160 |
價格Each
最少: 1
多項: 1
NT$38.00
品項附註
僅針對此訂單新增至訂單確認、發票和出貨備註。
產品訊息
製造商ONSEMI
製造商產品編號BD137G复制
訂購代碼1653612
技術資料表
Transistor PolarityNPN
Collector Emitter Voltage Max60V
Continuous Collector Current1.5A
Power Dissipation65W
Transistor Case StyleTO-225AA
Transistor MountingThrough Hole
No. of Pins3Pins
Transition Frequency-
DC Current Gain hFE Min40hFE
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
SVHCNo SVHC (25-Jun-2025)
產品總覽
The BD137G is a 60V NPN bipolar medium-power Silicon Transistor designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits.
- Complementary with BD138
應用
Industrial, Power Management, Audio
技術規格
Transistor Polarity
NPN
Continuous Collector Current
1.5A
Transistor Case Style
TO-225AA
No. of Pins
3Pins
DC Current Gain hFE Min
40hFE
Product Range
-
MSL
-
Collector Emitter Voltage Max
60V
Power Dissipation
65W
Transistor Mounting
Through Hole
Transition Frequency
-
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (25-Jun-2025)
下載產品合規憑證
產品合規憑證
重量 (公斤)：.000454