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BS170-D75Z
Power MOSFET, N Channel, 60 V, 500 mA, 5 ohm, TO-226AA, Through Hole
1,861 有存貨
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| 數量 | 價格 |
|---|---|
| 5+ | NT$10.260 |
| 50+ | NT$8.400 |
| 100+ | NT$6.530 |
| 500+ | NT$6.400 |
| 1000+ | NT$6.270 |
價格Each (Supplied on Cut Tape)
最少: 5
多項: 5
NT$51.30
品項附註
僅針對此訂單新增至訂單確認、發票和出貨備註。
產品訊息
製造商ONSEMI
製造商產品編號BS170-D75Z复制
製造商標準前置時間54 週
訂購代碼2453831
技術資料表
Channel TypeN Channel
Drain Source Voltage Vds60V
Continuous Drain Current Id500mA
Drain Source On State Resistance5ohm
Transistor Case StyleTO-226AA
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2.1V
Power Dissipation830mW
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
SVHCNo SVHC (25-Jun-2025)
BS170-D75Z 的替代選擇
找到 3 個產品
產品總覽
The BS170_D75Z is a N-channel enhancement-mode FET produced using high cell density DMOS technology. It is designed to minimize ON-state resistance while provide rugged, reliable and fast switching performance. It can be used in most applications requiring up to 500mA DC. It is particularly suited for low voltage, low current applications such as power MOSFET gate drivers and other switching applications.
- High density cell design for low RDS (ON)
- Voltage controlled small signal switch
- Rugged and reliable
- High saturation current capability
技術規格
Channel Type
N Channel
Continuous Drain Current Id
500mA
Transistor Case Style
TO-226AA
Rds(on) Test Voltage
10V
Power Dissipation
830mW
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Drain Source Voltage Vds
60V
Drain Source On State Resistance
5ohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
2.1V
No. of Pins
3Pins
Product Range
-
MSL
-
法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
關稅編號：85412100
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (25-Jun-2025)
下載產品合規憑證
產品合規憑證
重量 (公斤)：.000713