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BSS138LT3G
Power MOSFET, N Channel, 50 V, 200 mA, 3.5 ohm, SOT-23, Surface Mount
56,045 有存貨
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305 件可于 1-2 個工作日後配送(新加坡 件庫存)
55740 件可于 3-4 個工作日後配送(英國 件庫存)
| 數量 | 價格 |
|---|---|
| 5+ | NT$9.020 |
| 10+ | NT$5.570 |
| 100+ | NT$3.480 |
| 500+ | NT$2.590 |
| 1000+ | NT$2.030 |
| 5000+ | NT$1.750 |
價格Each
最少: 5
多項: 5
NT$45.10
品項附註
僅針對此訂單新增至訂單確認、發票和出貨備註。
產品訊息
製造商ONSEMI
製造商產品編號BSS138LT3G
訂購代碼2101819
技術資料表
Channel TypeN Channel
Drain Source Voltage Vds50V
Continuous Drain Current Id200mA
Drain Source On State Resistance3.5ohm
Transistor Case StyleSOT-23
Transistor MountingSurface Mount
Rds(on) Test Voltage2.75V
Gate Source Threshold Voltage Max500mV
Power Dissipation225mW
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
SVHCNo SVHC (25-Jun-2025)
產品總覽
The BSS138LT3G is a N-channel Power MOSFET with low threshold voltage and ideal for low voltage applications. Miniature surface mount package saves board space.
- ±20VDC Continuous gate-to-source voltage
- 556°C/W Junction-to-ambient thermal resistance
應用
Power Management, Consumer Electronics, Computers & Computer Peripherals
技術規格
Channel Type
N Channel
Continuous Drain Current Id
200mA
Transistor Case Style
SOT-23
Rds(on) Test Voltage
2.75V
Power Dissipation
225mW
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Drain Source Voltage Vds
50V
Drain Source On State Resistance
3.5ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
500mV
No. of Pins
3Pins
Product Range
-
MSL
-
BSS138LT3G 的替代選擇
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法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (25-Jun-2025)
下載產品合規憑證
產品合規憑證
重量 (公斤)：.000006