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BUL45D2G
Bipolar (BJT) Single Transistor, NPN, 400 V, 5 A, 75 W, TO-220, Through Hole
可供訂購
製造商標準交貨時間：54 週
有貨時通知我
| 數量 | 價格 |
|---|---|
| 1+ | NT$93.130 |
| 10+ | NT$71.470 |
| 100+ | NT$67.910 |
| 500+ | NT$54.330 |
| 1000+ | NT$50.130 |
| 5000+ | NT$49.130 |
價格Each
最少: 1
多項: 1
NT$93.13
品項附註
僅針對此訂單新增至訂單確認、發票和出貨備註。
產品訊息
製造商ONSEMI
製造商產品編號BUL45D2G复制
製造商標準前置時間54 週
訂購代碼2845300
技術資料表
Transistor PolarityNPN
Collector Emitter Voltage Max400V
Continuous Collector Current5A
Power Dissipation75W
Transistor Case StyleTO-220
Transistor MountingThrough Hole
No. of Pins3Pins
Transition Frequency13MHz
DC Current Gain hFE Min10hFE
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
SVHCNo SVHC (25-Jun-2025)
產品總覽
The BUL45D2G is a NPN state-of-art high speed high gain Bipolar Power Transistor (H2BIP) with high dynamic characteristics and lot-to-lot minimum spread 150ns on storage time makes it ideally suitable for light ballast applications. It offers extremely low storage time minimum/maximum guarantees due to the H2BIP structure which minimizes the spread.
- Low base drive requirement
- Integrated collector-emitter free wheeling diode
- Fully characterized and guaranteed dynamic VCE(sat)
- 6 Sigma process providing tight and reproducible parameter spreads
應用
Industrial, Power Management
技術規格
Transistor Polarity
NPN
Continuous Collector Current
5A
Transistor Case Style
TO-220
No. of Pins
3Pins
DC Current Gain hFE Min
10hFE
Product Range
-
MSL
-
Collector Emitter Voltage Max
400V
Power Dissipation
75W
Transistor Mounting
Through Hole
Transition Frequency
13MHz
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：Y-Ex
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (25-Jun-2025)
下載產品合規憑證
產品合規憑證
重量 (公斤)：.001