FCD9N60NTM
Power MOSFET, N Channel, 600 V, 9 A, 0.33 ohm, TO-252 (DPAK), Surface Mount
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The FCD9N60NTM is a N-channel SuperFET® high voltage super-junction MOSFET employs a deep Trench filling process that differentiates it from the conventional SJ MOSFETs. This advanced technology and precise process control provides lowest Rsp ON-resistance, superior switching performance and ruggedness. SupreMOS MOSFET is suitable for high frequency switching power converter applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.
- Ultra low gate charge (Qg = 17.8nC)
- Low effective output capacitance (Coss.eff = 122pF)
- 100% avalanche tested
應用
Industrial, Power Management, Communications & Networking
警告
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
技術規格
N Channel
9A
TO-252 (DPAK)
10V
83.3W
150°C
-
Lead (17-Jan-2022)
600V
0.33ohm
Surface Mount
3V
3Pins
-
MSL 1 - Unlimited
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法規與環境保護
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
RoHS
RoHS
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