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FCPF11N60
Power MOSFET, N Channel, 600 V, 11 A, 0.38 ohm, TO-220F, Through Hole
602 有存貨
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602 件可于 3-4 個工作日後配送(英國 件庫存)
| 數量 | 價格 |
|---|---|
| 1+ | NT$157.890 |
| 10+ | NT$103.070 |
| 100+ | NT$80.750 |
| 500+ | NT$67.630 |
| 1000+ | NT$62.700 |
價格Each
最少: 1
多項: 1
NT$157.89
品項附註
僅針對此訂單新增至訂單確認、發票和出貨備註。
產品訊息
製造商ONSEMI
製造商產品編號FCPF11N60
訂購代碼1095007
技術資料表
Channel TypeN Channel
Drain Source Voltage Vds600V
Continuous Drain Current Id11A
Drain Source On State Resistance0.38ohm
Transistor Case StyleTO-220F
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max5V
Power Dissipation36W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
SVHCNo SVHC (25-Jun-2025)
產品總覽
The FCPF11N60 is a 600V N-channel SuperFET® high voltage super-junction MOSFET utilizes charge balance technology for outstanding low ON-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dV/dt rate and higher avalanche energy. Consequently, SuperFET MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.
- Ultra low gate charge (Qg = 40nC)
- Low effective output capacitance (Coss.eff = 95pF)
- 100% avalanche tested
應用
Industrial, Power Management, Communications & Networking, Lighting
技術規格
Channel Type
N Channel
Continuous Drain Current Id
11A
Transistor Case Style
TO-220F
Rds(on) Test Voltage
10V
Power Dissipation
36W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Drain Source Voltage Vds
600V
Drain Source On State Resistance
0.38ohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
5V
No. of Pins
3Pins
Product Range
-
MSL
-
相關產品
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法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：Y-Ex
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (25-Jun-2025)
下載產品合規憑證
產品合規憑證
重量 (公斤)：.002105