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FDA38N30
Power MOSFET, N Channel, 300 V, 38 A, 0.07 ohm, TO-204AA, Through Hole
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860 件可于 3-4 個工作日後配送(英國 件庫存)
| 數量 | 價格 |
|---|---|
| 1+ | NT$147.460 |
| 10+ | NT$83.430 |
| 100+ | NT$81.770 |
| 500+ | NT$80.100 |
| 1000+ | NT$78.430 |
價格Each
最少: 1
多項: 1
NT$147.46
品項附註
僅針對此訂單新增至訂單確認、發票和出貨備註。
產品訊息
製造商ONSEMI
製造商產品編號FDA38N30复制
製造商標準前置時間12 週
訂購代碼2453389
技術資料表
Channel TypeN Channel
Drain Source Voltage Vds300V
Continuous Drain Current Id38A
Drain Source On State Resistance0.07ohm
Transistor Case StyleTO-204AA
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max5V
Power Dissipation312W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
SVHCNo SVHC (25-Jun-2025)
產品總覽
The FDA38N30 is an UniFET™ N-channel MOSFET produced using high voltage planar stripe and DMOS technology. It is tailored to reduce ON-state resistance and to provide better switching performance and higher avalanche energy strength. It is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.
- 60nC typical low gate charge
- 60pF typical low Crss
- 100% avalanche tested
- ESD Improved capability
技術規格
Channel Type
N Channel
Continuous Drain Current Id
38A
Transistor Case Style
TO-204AA
Rds(on) Test Voltage
10V
Power Dissipation
312W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Drain Source Voltage Vds
300V
Drain Source On State Resistance
0.07ohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
5V
No. of Pins
3Pins
Product Range
-
MSL
-
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法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：Y-Ex
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (25-Jun-2025)
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產品合規憑證
重量 (公斤)：.006401