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FDB14N30TM
Power MOSFET, N Channel, 300 V, 14 A, 0.29 ohm, TO-263 (D2PAK), Surface Mount
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產品訊息
製造商ONSEMI
製造商產品編號FDB14N30TM复制
訂購代碼
複捲式1495273RL
條帶式包裝1495273
技術資料表
Channel TypeN Channel
Drain Source Voltage Vds300V
Continuous Drain Current Id14A
Drain Source On State Resistance0.29ohm
Transistor Case StyleTO-263 (D2PAK)
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max5V
Power Dissipation140W
No. of Pins2Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
SVHCTo Be Advised
產品總覽
The FDB14N30TM is an UniFET™ N-channel high voltage MOSFET produced from on semiconductor's family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce ON-state resistance and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power and ATX.
- Improved dV/dt capability
- 100% avalanche tested
- 18nC typical low gate charge
- 17pF typical low Crss
警告
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
技術規格
Channel Type
N Channel
Continuous Drain Current Id
14A
Transistor Case Style
TO-263 (D2PAK)
Rds(on) Test Voltage
10V
Power Dissipation
140W
Operating Temperature Max
150°C
Qualification
-
SVHC
To Be Advised
Drain Source Voltage Vds
300V
Drain Source On State Resistance
0.29ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
5V
No. of Pins
2Pins
Product Range
-
MSL
-
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原產地：
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：Y-Ex
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:To Be Advised
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重量 (公斤)：.00143