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FDC6301N..
Dual MOSFET, N Channel, 25 V, 220 mA, 5 ohm
圖片僅供舉例說明。 請參閱產品描述。
5,715 有存貨
12,000 即日起您可預購補貨
5,715 件可于 3-4 個工作日後配送(英國 件庫存)
包裝選項
| 包裝類型 | 數量 | 單價: | 總計 |
|---|---|---|---|
| 條帶式包裝 | 5 | NT$9.650 | NT$48.25 |
| 總計 價格 | NT$48.25 | ||
條帶式包裝 & 複捲式
| 數量 | 價格 |
|---|---|
| 5+ | NT$9.650 |
| 50+ | NT$9.080 |
| 100+ | NT$8.490 |
| 500+ | NT$6.420 |
| 1500+ | NT$6.290 |
整卷
| 數量 | 價格 |
|---|---|
| 3000+ | NT$6.160 |
| 9000+ | NT$6.040 |
品項附註
僅針對此訂單新增至訂單確認、發票和出貨備註。
產品訊息
製造商ONSEMI
製造商產品編號FDC6301N..复制
製造商標準前置時間54 週
訂購代碼
整卷2985410
複捲式1700673RL
條帶式包裝1700673
技術資料表
Channel TypeN Channel
Drain Source Voltage Vds N Channel25V
Drain Source Voltage Vds P Channel-
Continuous Drain Current Id N Channel220mA
Continuous Drain Current Id P Channel-
Drain Source On State Resistance N Channel5ohm
Drain Source On State Resistance P Channel-
Transistor Case StyleSuperSOT
No. of Pins6Pins
Power Dissipation N Channel900mW
Power Dissipation P Channel-
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (25-Jun-2025)
產品總覽
The FDC6301N is a dual N-channel logic level enhancement-mode FET with high cell density and DMOS technology. It is very high density process is especially tailored to minimize ON-state resistance. It has been designed especially for low voltage applications as a replacement for digital transistors. Since bias resistors are not required, this N-channel FET's can replace several digital transistors, with a variety of bias resistors.
- Very low level gate drive requirements allowing direct operation in 3V circuits
- Gate-source Zener for ESD ruggedness
- -0.5 to 8V Gate to source voltage
- 0.22A Continuous drain/output current
- 0.5A Pulsed drain/output current
應用
Industrial, Power Management
警告
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
技術規格
Channel Type
N Channel
Drain Source Voltage Vds P Channel
-
Continuous Drain Current Id P Channel
-
Drain Source On State Resistance P Channel
-
No. of Pins
6Pins
Power Dissipation P Channel
-
Product Range
-
MSL
MSL 1 - Unlimited
Drain Source Voltage Vds N Channel
25V
Continuous Drain Current Id N Channel
220mA
Drain Source On State Resistance N Channel
5ohm
Transistor Case Style
SuperSOT
Power Dissipation N Channel
900mW
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
技術文件 (1)
法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：United States
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：United States
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (25-Jun-2025)
下載產品合規憑證
產品合規憑證
重量 (公斤)：.000091