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FDC6333C..
Dual MOSFET, Complementary N and P Channel, 30 V, 30 V, 2.5 A, 2.5 A, 0.095 ohm
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15 件可于 1-2 個工作日後配送(新加坡 件庫存)
5,653 件可于 3-4 個工作日後配送(英國 件庫存)
包裝選項
| 包裝類型 | 數量 | 單價: | 總計 |
|---|---|---|---|
| 條帶式包裝 | 5 | NT$19.240 | NT$96.20 |
| 總計 價格 | NT$96.20 | ||
條帶式包裝 & 複捲式
| 數量 | 價格 |
|---|---|
| 5+ | NT$19.240 |
| 50+ | NT$15.880 |
| 100+ | NT$12.520 |
| 500+ | NT$8.650 |
| 1500+ | NT$8.480 |
整卷
| 數量 | 價格 |
|---|---|
| 3000+ | NT$7.100 |
| 9000+ | NT$6.960 |
品項附註
僅針對此訂單新增至訂單確認、發票和出貨備註。
產品訊息
製造商ONSEMI
製造商產品編號FDC6333C..复制
製造商標準前置時間19 週
訂購代碼
整卷2985375
複捲式1700671RL
條帶式包裝1700671
技術資料表
Channel TypeComplementary N and P Channel
Drain Source Voltage Vds N Channel30V
Drain Source Voltage Vds P Channel30V
Continuous Drain Current Id N Channel2.5A
Continuous Drain Current Id P Channel2.5A
Drain Source On State Resistance N Channel0.095ohm
Drain Source On State Resistance P Channel0.095ohm
Transistor Case StyleSuperSOT
No. of Pins6Pins
Power Dissipation N Channel960mW
Power Dissipation P Channel960mW
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
SVHCNo SVHC (25-Jun-2025)
產品總覽
The FDC6333C is a N/P-channel MOSFET produced using advanced PowerTrench® process. It has been especially tailored to minimize ON-state resistance and yet maintain superior switching performance. It has been designed to offer exceptional power dissipation in a very small footprint for applications where the bigger more expensive packages are impractical. It is suitable for use with DC-to-DC converter, load switch and LCD display inverter applications.
- Low gate charge
- Small footprint
- Low profile
- High performance Trench technology for extremely low RDS (ON)
應用
Industrial, Power Management
技術規格
Channel Type
Complementary N and P Channel
Drain Source Voltage Vds P Channel
30V
Continuous Drain Current Id P Channel
2.5A
Drain Source On State Resistance P Channel
0.095ohm
No. of Pins
6Pins
Power Dissipation P Channel
960mW
Product Range
-
MSL
-
Drain Source Voltage Vds N Channel
30V
Continuous Drain Current Id N Channel
2.5A
Drain Source On State Resistance N Channel
0.095ohm
Transistor Case Style
SuperSOT
Power Dissipation N Channel
960mW
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
技術文件 (1)
法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：United States
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：United States
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (25-Jun-2025)
下載產品合規憑證
產品合規憑證
重量 (公斤)：.002