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FDD306P
Power MOSFET, P Channel, 12 V, 6.7 A, 0.028 ohm, TO-252 (DPAK), Surface Mount
519 有存貨
2,500 即日起您可預購補貨
519 件可于 3-4 個工作日後配送(英國 件庫存)
| 數量 | 價格 |
|---|---|
| 5+ | NT$24.810 |
| 50+ | NT$23.470 |
| 100+ | NT$22.130 |
| 500+ | NT$17.340 |
| 1000+ | NT$17.000 |
價格Each (Supplied on Cut Tape)
最少: 5
多項: 5
NT$124.05
品項附註
僅針對此訂單新增至訂單確認、發票和出貨備註。
產品訊息
製造商ONSEMI
製造商產品編號FDD306P复制
製造商標準前置時間31 週
訂購代碼9958827
技術資料表
Channel TypeP Channel
Drain Source Voltage Vds12V
Continuous Drain Current Id6.7A
Drain Source On State Resistance0.028ohm
Transistor Case StyleTO-252 (DPAK)
Transistor MountingSurface Mount
Rds(on) Test Voltage4.5V
Gate Source Threshold Voltage Max500mV
Power Dissipation52W
No. of Pins3Pins
Operating Temperature Max175°C
Product Range-
Qualification-
SVHCLead (04-Feb-2026)
產品總覽
The FDD306P is a 1.8V specified P-channel MOSFET uses advanced low voltage PowerTrench® process. It has been optimized for battery power management.
- Fast switching speed
- High performance Trench technology for extremely low RDS (ON)
- High power and current handing capability
警告
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
技術規格
Channel Type
P Channel
Continuous Drain Current Id
6.7A
Transistor Case Style
TO-252 (DPAK)
Rds(on) Test Voltage
4.5V
Power Dissipation
52W
Operating Temperature Max
175°C
Qualification
-
SVHC
Lead (04-Feb-2026)
Drain Source Voltage Vds
12V
Drain Source On State Resistance
0.028ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
500mV
No. of Pins
3Pins
Product Range
-
MSL
MSL 1 - Unlimited
相關產品
找到 4 個產品
法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：Y-Ex
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:Lead (04-Feb-2026)
下載產品合規憑證
產品合規憑證
重量 (公斤)：.000605