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FDD8451
Power MOSFET, N Channel, 40 V, 28 A, 0.024 ohm, TO-252 (DPAK), Surface Mount
5,856 有存貨
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| 數量 | 價格 |
|---|---|
| 1+ | NT$62.220 |
| 10+ | NT$39.420 |
| 100+ | NT$26.900 |
| 500+ | NT$17.140 |
| 1000+ | NT$15.230 |
| 5000+ | NT$14.840 |
價格Each
最少: 1
多項: 1
NT$62.22
品項附註
僅針對此訂單新增至訂單確認、發票和出貨備註。
產品訊息
製造商ONSEMI
製造商產品編號FDD8451复制
製造商標準前置時間11 週
訂購代碼2322587
技術資料表
Channel TypeN Channel
Drain Source Voltage Vds40V
Continuous Drain Current Id28A
Drain Source On State Resistance0.024ohm
Transistor Case StyleTO-252 (DPAK)
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2.1V
Power Dissipation30W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCLead (14-Jun-2023)
產品總覽
The FDD8451 is a N-channel MOSFET produced using PowerTrench® process. It has been designed specifically to improve the overall efficiency of DC-to-DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, fast switching speed and extremely low RDS (ON).
- Low gate charge
- High performance Trench technology for extremely low RDS (ON)
- Fast switching
技術規格
Channel Type
N Channel
Continuous Drain Current Id
28A
Transistor Case Style
TO-252 (DPAK)
Rds(on) Test Voltage
10V
Power Dissipation
30W
Operating Temperature Max
150°C
Qualification
-
SVHC
Lead (14-Jun-2023)
Drain Source Voltage Vds
40V
Drain Source On State Resistance
0.024ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
2.1V
No. of Pins
3Pins
Product Range
-
MSL
MSL 1 - Unlimited
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法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：Y-Ex
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:Lead (14-Jun-2023)
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產品合規憑證
重量 (公斤)：.000479