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產品訊息
製造商ONSEMI
製造商產品編號FDG1024NZ.复制
訂購代碼2322589
技術資料表
Channel TypeN Channel
Drain Source Voltage Vds N Channel20V
Drain Source Voltage Vds P Channel20V
Continuous Drain Current Id N Channel1.2A
Continuous Drain Current Id P Channel1.2A
Drain Source On State Resistance N Channel0.16ohm
Drain Source On State Resistance P Channel0.16ohm
Transistor Case StyleSC-70
No. of Pins6Pins
Power Dissipation N Channel360mW
Power Dissipation P Channel360mW
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (25-Jun-2025)
產品總覽
The FDG1024NZ is a dual N-channel logic level enhancement-mode MOSFET with high cell density and DMOS technology. This very high density process is especially tailored to minimize ON-state resistance. This device has been designed especially for low voltage applications as a replacement for bipolar digital transistors and small signal MOSFETs. Since bias resistors are not required, this dual digital FET can replace several different digital transistors, with different bias resistor values.
- Very low level gate drive requirements allowing operation in 1.5V circuits (VGS (th) <lt/>1V)
- Very small package outline
- ±8V Gate to source voltage
- 1.2A Continuous drain current
- 6A Pulsed drain current
應用
Industrial, Power Management
技術規格
Channel Type
N Channel
Drain Source Voltage Vds P Channel
20V
Continuous Drain Current Id P Channel
1.2A
Drain Source On State Resistance P Channel
0.16ohm
No. of Pins
6Pins
Power Dissipation P Channel
360mW
Product Range
-
MSL
MSL 1 - Unlimited
Drain Source Voltage Vds N Channel
20V
Continuous Drain Current Id N Channel
1.2A
Drain Source On State Resistance N Channel
0.16ohm
Transistor Case Style
SC-70
Power Dissipation N Channel
360mW
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
法規與環境保護
原產地:
承擔產品生產最後程序之國家原產地:Philippines
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地:Philippines
承擔產品生產最後程序之國家
關稅編號:85412100
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定:是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (25-Jun-2025)
下載產品合規憑證
產品合規憑證
重量 (公斤):.000318

