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FDH055N15A
Power MOSFET, N Channel, 150 V, 156 A, 4800 µohm, TO-247, Through Hole
950 有存貨
3,150 即日起您可預購補貨
660 件可于 1-2 個工作日後配送(新加坡 件庫存)
290 件可于 3-4 個工作日後配送(英國 件庫存)
| 數量 | 價格 |
|---|---|
| 1+ | NT$309.170 |
| 5+ | NT$244.930 |
| 10+ | NT$180.680 |
| 50+ | NT$144.410 |
| 100+ | NT$135.230 |
| 250+ | NT$132.530 |
價格Each
最少: 1
多項: 1
NT$309.17
品項附註
僅針對此訂單新增至訂單確認、發票和出貨備註。
產品訊息
製造商ONSEMI
製造商產品編號FDH055N15A复制
製造商標準前置時間58 週
訂購代碼2825158
Product RangePowerTrench
技術資料表
Channel TypeN Channel
Drain Source Voltage Vds150V
Continuous Drain Current Id156A
Drain Source On State Resistance4800µohm
Transistor Case StyleTO-247
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4V
Power Dissipation429W
No. of Pins3Pins
Operating Temperature Max175°C
Product RangePowerTrench
Qualification-
SVHCLead (25-Jun-2025)
產品總覽
FDH055N15A is a N-channel, POWERTRENCH® MOSFET. This N-channel MOSFET is produced using Onsemi’s advanced POWERTRENCH process that has been tailored to minimize the on-state resistance while maintaining superior switching performance. The application includes synchronous rectification for ATX / sever / telecom PSU, battery protection circuit, motor drives and uninterruptible power supplies, micro solar inverter.
- Fast switching speed, low gate charge, high power and current handling capability
- High performance trench technology for extremely low RDS(on)
- Static drain to source on resistance is 4.8mohm typ (VGS = 10V, ID = 120A, TC = 25°C)
- Drain to source breakdown voltage is 150V min (ID = 250µA, VGS = 0V, TC = 25°C)
- Breakdown voltage temperature coefficient is 0.1V/°C typ (ID = 250µA, Referenced to 25°C)
- Gate threshold voltage range from 2.0 to 4.0V (VGS = VDS, ID = 250µA, 25°C)
- Input capacitance is 7100pF typ (VDS = 75V, VGS = 0V, f = 1MHz, 25°C)
- Output capacitance is 664pF typ (VDS = 75V, VGS = 0V, f = 1MHz, 25°C)
- Power dissipation is 429W (25°C)
- TO−247−3LD package, operating temperature range from -55 to + 175°C
技術規格
Channel Type
N Channel
Continuous Drain Current Id
156A
Transistor Case Style
TO-247
Rds(on) Test Voltage
10V
Power Dissipation
429W
Operating Temperature Max
175°C
Qualification
-
SVHC
Lead (25-Jun-2025)
Drain Source Voltage Vds
150V
Drain Source On State Resistance
4800µohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
4V
No. of Pins
3Pins
Product Range
PowerTrench
MSL
MSL 1 - Unlimited
法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：Y-Ex
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:Lead (25-Jun-2025)
下載產品合規憑證
產品合規憑證
重量 (公斤)：.006867