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FDMC86102L
Power MOSFET, N Channel, 100 V, 18 A, 0.023 ohm, MLP, Surface Mount
產品訊息
製造商ONSEMI
製造商產品編號FDMC86102L
訂購代碼2083266
技術資料表
Channel TypeN Channel
Drain Source Voltage Vds100V
Continuous Drain Current Id18A
Drain Source On State Resistance0.023ohm
Transistor Case StyleMLP
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max1.8V
Power Dissipation41W
No. of Pins8Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSLMSL 1 - Unlimited
SVHCNo SVHC (27-Jun-2024)
產品總覽
The FDMC86102L is a N-channel MOSFET produced using advanced PowerTrench® process that incorporates shielded gate technology. This process has been optimized for the ON-state resistance and yet maintains superior switching performance.
- Low-profile
技術規格
Channel Type
N Channel
Continuous Drain Current Id
18A
Transistor Case Style
MLP
Rds(on) Test Voltage
10V
Power Dissipation
41W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (27-Jun-2024)
Drain Source Voltage Vds
100V
Drain Source On State Resistance
0.023ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
1.8V
No. of Pins
8Pins
Product Range
-
MSL
MSL 1 - Unlimited
FDMC86102L 的替代選擇
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法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：Thailand
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：Thailand
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (27-Jun-2024)
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產品合規憑證
重量 (公斤)：.00015