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FDMC86160
Power MOSFET, N Channel, 100 V, 43 A, 0.0112 ohm, Power 33, Surface Mount
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1,688 件可于 1-2 個工作日後配送(新加坡 件庫存)
2,825 件可于 3-4 個工作日後配送(英國 件庫存)
包裝選項
| 包裝類型 | 數量 | 單價: | 總計 |
|---|---|---|---|
| 條帶式包裝 | 5 | NT$81.400 | NT$407.00 |
| 總計 價格 | NT$407.00 | ||
條帶式包裝 & 複捲式
| 數量 | 價格 |
|---|---|
| 5+ | NT$81.400 |
| 50+ | NT$69.070 |
| 100+ | NT$56.740 |
| 500+ | NT$39.050 |
| 1500+ | NT$38.270 |
品項附註
僅針對此訂單新增至訂單確認、發票和出貨備註。
產品訊息
製造商ONSEMI
製造商產品編號FDMC86160复制
製造商標準前置時間24 週
訂購代碼
複捲式2254251RL
條帶式包裝2254251
技術資料表
Channel TypeN Channel
Drain Source Voltage Vds100V
Continuous Drain Current Id43A
Drain Source On State Resistance0.0112ohm
Transistor Case StylePower 33
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2.9V
Power Dissipation54W
No. of Pins8Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCLead (25-Jun-2025)
產品總覽
The FDMC86160 is a N-channel MOSFET produced using advanced PowerTrench® process. It has been especially tailored to minimize the ON-state resistance. It is well suited for applications where ultra-low RDS (ON) is required in small spaces such as High performance VRM, POL and O-ring functions. It is suitable for bridge topologies and synchronous rectifier applications.
- High performance technology for extremely low RDS (ON)
技術規格
Channel Type
N Channel
Continuous Drain Current Id
43A
Transistor Case Style
Power 33
Rds(on) Test Voltage
10V
Power Dissipation
54W
Operating Temperature Max
150°C
Qualification
-
SVHC
Lead (25-Jun-2025)
Drain Source Voltage Vds
100V
Drain Source On State Resistance
0.0112ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
2.9V
No. of Pins
8Pins
Product Range
-
MSL
MSL 1 - Unlimited
法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：Philippines
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：Philippines
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：Y-Ex
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:Lead (25-Jun-2025)
下載產品合規憑證
產品合規憑證
重量 (公斤)：.000091