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FDMC8622
Power MOSFET, N Channel, 100 V, 16 A, 0.0437 ohm, MLP, Surface Mount
1,452 有存貨
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1452 件可于 3-4 個工作日後配送(英國 件庫存)
| 數量 | 價格 |
|---|---|
| 1+ | NT$64.420 |
| 10+ | NT$45.790 |
| 100+ | NT$31.070 |
| 500+ | NT$24.770 |
| 1000+ | NT$23.420 |
| 5000+ | NT$22.140 |
價格Each (Supplied on Cut Tape)
最少: 1
多項: 1
NT$64.42
品項附註
僅針對此訂單新增至訂單確認、發票和出貨備註。
產品訊息
製造商ONSEMI
製造商產品編號FDMC8622
訂購代碼2083268
技術資料表
Channel TypeN Channel
Drain Source Voltage Vds100V
Continuous Drain Current Id16A
Drain Source On State Resistance0.0437ohm
Transistor Case StyleMLP
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2.9V
Power Dissipation31W
No. of Pins8Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (25-Jun-2025)
產品總覽
The FDMC8622 is a N-channel MOSFET produced using advanced Power Trench® process that incorporates Shielded Gate technology. This process has been optimized for RDS (ON), switching performance and ruggedness.
- High performance Trench technology for extremely low RDS (ON)
- High power and current handling capability in a widely used surface-mount package
- 100% UIL tested
警告
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
技術規格
Channel Type
N Channel
Continuous Drain Current Id
16A
Transistor Case Style
MLP
Rds(on) Test Voltage
10V
Power Dissipation
31W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Drain Source Voltage Vds
100V
Drain Source On State Resistance
0.0437ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
2.9V
No. of Pins
8Pins
Product Range
-
MSL
MSL 1 - Unlimited
FDMC8622 的替代選擇
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法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：Philippines
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：Philippines
承擔產品生產最後程序之國家
關稅編號：85423990
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (25-Jun-2025)
下載產品合規憑證
產品合規憑證
重量 (公斤)：.0005