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FDN327N
Power MOSFET, N Channel, 20 V, 2 A, 0.07 ohm, SuperSOT, Surface Mount
產品訊息
製造商ONSEMI
製造商產品編號FDN327N
訂購代碼1471048
技術資料表
Channel TypeN Channel
Drain Source Voltage Vds20V
Continuous Drain Current Id2A
Drain Source On State Resistance0.07ohm
Transistor Case StyleSuperSOT
Transistor MountingSurface Mount
Rds(on) Test Voltage4.5V
Gate Source Threshold Voltage Max700mV
Power Dissipation500mW
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
SVHCNo SVHC (27-Jun-2024)
產品總覽
The FDN327N is a 20V specified N-channel MOSFET uses high voltage PowerTrench® process. It has been optimized for power management and load switch applications.
- Fast switching speed
- 4.5nC typical low gate charge
技術規格
Channel Type
N Channel
Continuous Drain Current Id
2A
Transistor Case Style
SuperSOT
Rds(on) Test Voltage
4.5V
Power Dissipation
500mW
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (27-Jun-2024)
Drain Source Voltage Vds
20V
Drain Source On State Resistance
0.07ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
700mV
No. of Pins
3Pins
Product Range
-
MSL
-
FDN327N 的替代選擇
找到 2 個產品
法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：Philippines
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：Philippines
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (27-Jun-2024)
下載產品合規憑證
產品合規憑證
重量 (公斤)：.000001