FDN337N

The FDN337N is N channel logic level enhancement mode power field effect transistor in superSOT-3 package. This transistor is produced using high cell density, DMOS technology, very high density process is especially tailored to minimize on state resistance, thus suite for low voltage applications in notebook computers, portable phones, PCMCIA cards and other battery powered circuits where fast switching and low inline power loss are needed in a very small outline surface mount package.

• High density cell design for extremely low Rds(on)
• Exceptional on resistance and maximum DC current capability
• Drain to source voltage (Vds) of 30V
• Gate to source voltage of ±8V
• Low on state resistance of 65mohm at Vgs 4.5V
• Continuous drain current of 2.2A
• Maximum power dissipation of 500mW
• Operating junction temperature range from -55°C to 150°C