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| 數量 | 價格 |
|---|---|
| 5+ | NT$12.810 |
| 50+ | NT$10.260 |
| 100+ | NT$7.710 |
| 500+ | NT$5.590 |
| 1500+ | NT$5.480 |
價格Each (Supplied on Cut Tape)
最少: 5
多項: 5
NT$64.05
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產品訊息
製造商ONSEMI
製造商產品編號FDN360P
訂購代碼9846336
Product RangePowerTrench® MOSFET
技術資料表
Channel TypeP Channel
Drain Source Voltage Vds30V
Continuous Drain Current Id2A
Drain Source On State Resistance0.08ohm
Transistor Case StyleSOT-23
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max1.9V
Power Dissipation500mW
No. of Pins3Pins
Operating Temperature Max150°C
Product RangePowerTrench® MOSFET
Qualification-
SVHCNo SVHC (25-Jun-2025)
產品總覽
The FDN360P is a surface mount, single P channel PowerTrench MOSFET in superSOT-23 package. PowerTrench process has been tailored to minimize the onstate resistance and maintain low gate charge for superior switching performance. This device is well suited for low voltage and battery powered applications.
- High performance trench technology for extremely low Rds(ON)
- Low gate charge typically 6.2nC
- Drain to source voltage (Vds) of -30V
- Gate to source voltage of ±20V
- Continuous drain current (Id) of -2A at 25°C
- Power dissipation (Pd) of 500mW
- Low on state resistance of 100mohm at Vgs -4.5V
- Operating temperature range from -55°C to 150°C
技術規格
Channel Type
P Channel
Continuous Drain Current Id
2A
Transistor Case Style
SOT-23
Rds(on) Test Voltage
10V
Power Dissipation
500mW
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Drain Source Voltage Vds
30V
Drain Source On State Resistance
0.08ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
1.9V
No. of Pins
3Pins
Product Range
PowerTrench® MOSFET
MSL
MSL 1 - Unlimited
FDN360P 的替代選擇
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法規與環境保護
原產地:
承擔產品生產最後程序之國家原產地:Philippines
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地:Philippines
承擔產品生產最後程序之國家
關稅編號:85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定:是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (25-Jun-2025)
下載產品合規憑證
產品合規憑證
重量 (公斤):.000454