列印頁面
FDP5800
Power MOSFET, N Channel, 60 V, 80 A, 6000 µohm, TO-220, Through Hole
可供訂購
有貨時通知我
| 數量 | 價格 |
|---|---|
| 1+ | NT$118.260 |
| 10+ | NT$67.250 |
| 100+ | NT$57.320 |
| 500+ | NT$56.180 |
| 1000+ | NT$55.030 |
價格Each
最少: 1
多項: 1
NT$118.26
品項附註
僅針對此訂單新增至訂單確認、發票和出貨備註。
產品訊息
製造商ONSEMI
製造商產品編號FDP5800复制
製造商標準前置時間22 週
訂購代碼1495237
技術資料表
Channel TypeN Channel
Drain Source Voltage Vds60V
Continuous Drain Current Id80A
Drain Source On State Resistance6000µohm
Transistor Case StyleTO-220
Transistor MountingThrough Hole
Rds(on) Test Voltage20V
Gate Source Threshold Voltage Max2.5V
Power Dissipation242mW
No. of Pins3Pins
Operating Temperature Max175°C
Product Range-
Qualification-
MSL-
SVHCLead (25-Jun-2025)
產品總覽
The FDP5800 is a N-channel MOSFET produced using advanced PowerTrench® process. It has been tailored to minimize the ON-state resistance while maintaining superior switching performance. It is suitable for use in synchronous rectification, battery protection circuit and uninterruptible power supplies applications.
- High performance Trench technology for extremely low RDS (ON)
- Low gate charge
- High power and current handing capability
技術規格
Channel Type
N Channel
Continuous Drain Current Id
80A
Transistor Case Style
TO-220
Rds(on) Test Voltage
20V
Power Dissipation
242mW
Operating Temperature Max
175°C
Qualification
-
SVHC
Lead (25-Jun-2025)
Drain Source Voltage Vds
60V
Drain Source On State Resistance
6000µohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
2.5V
No. of Pins
3Pins
Product Range
-
MSL
-
相關產品
找到 3 個產品
法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：Y-Ex
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:Lead (25-Jun-2025)
下載產品合規憑證
產品合規憑證
重量 (公斤)：.00186