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| 數量 | 價格 |
|---|---|
| 1+ | NT$128.970 |
| 10+ | NT$65.970 |
| 100+ | NT$65.310 |
| 500+ | NT$52.580 |
| 1000+ | NT$52.250 |
價格Each
最少: 1
多項: 1
NT$128.97
品項附註
僅針對此訂單新增至訂單確認、發票和出貨備註。
產品訊息
製造商ONSEMI
製造商產品編號FDPF15N65复制
製造商標準前置時間17 週
訂購代碼2453860
技術資料表
Channel TypeN Channel
Drain Source Voltage Vds650V
Continuous Drain Current Id15A
Drain Source On State Resistance0.36ohm
Transistor Case StyleTO-220F
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max5V
Power Dissipation38.5W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
SVHCNo SVHC (25-Jun-2025)
產品總覽
The FDPF15N65 is a N-channel UniFET high voltage MOSFET based on planar stripe and DMOS technology. This MOSFET is tailored to reduce ON-state resistance and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.
- Low gate charge (48.5nC)
- Low Crss (23.6pF)
- 100% avalanche tested
應用
Industrial, Power Management, Communications & Networking, Consumer Electronics
警告
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
技術規格
Channel Type
N Channel
Continuous Drain Current Id
15A
Transistor Case Style
TO-220F
Rds(on) Test Voltage
10V
Power Dissipation
38.5W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Drain Source Voltage Vds
650V
Drain Source On State Resistance
0.36ohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
5V
No. of Pins
3Pins
Product Range
-
MSL
-
FDPF15N65 的替代選擇
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法規與環境保護
原產地:
承擔產品生產最後程序之國家原產地:China
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地:China
承擔產品生產最後程序之國家
關稅編號:85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定:Y-Ex
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (25-Jun-2025)
下載產品合規憑證
產品合規憑證
重量 (公斤):.230425

