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| 數量 | 價格 |
|---|---|
| 1+ | NT$109.940 |
| 10+ | NT$55.630 |
| 100+ | NT$49.800 |
| 500+ | NT$48.810 |
| 1000+ | NT$47.810 |
價格Each
最少: 1
多項: 1
NT$109.94
品項附註
僅針對此訂單新增至訂單確認、發票和出貨備註。
產品訊息
製造商ONSEMI
製造商產品編號FDPF44N25T复制
製造商標準前置時間18 週
訂購代碼2322606
技術資料表
Channel TypeN Channel
Drain Source Voltage Vds250V
Continuous Drain Current Id44A
Drain Source On State Resistance0.058ohm
Transistor Case StyleTO-220F
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max3V
Power Dissipation38W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
SVHCNo SVHC (25-Jun-2025)
產品總覽
The FDPF44N25T is an UniFET™ high voltage MOSFET produced based on planar stripe and DMOS technology. It is tailored to reduce ON-state resistance and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.
- 47nC Typical low gate charge
- 60pF Typical low Crss
應用
Power Management, Consumer Electronics, Lighting
技術規格
Channel Type
N Channel
Continuous Drain Current Id
44A
Transistor Case Style
TO-220F
Rds(on) Test Voltage
10V
Power Dissipation
38W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Drain Source Voltage Vds
250V
Drain Source On State Resistance
0.058ohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
3V
No. of Pins
3Pins
Product Range
-
MSL
-
相關產品
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法規與環境保護
原產地:
承擔產品生產最後程序之國家原產地:China
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地:China
承擔產品生產最後程序之國家
關稅編號:85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定:Y-Ex
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (25-Jun-2025)
下載產品合規憑證
產品合規憑證
重量 (公斤):.00293

