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FDPF55N06
Power MOSFET, N Channel, 60 V, 55 A, 0.018 ohm, TO-220F, Through Hole
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8,990 有存貨
7,120 即日起您可預購補貨
8,990 件可于 3-4 個工作日後配送(英國 件庫存)
| 數量 | 價格 |
|---|---|
| 1+ | NT$86.750 |
| 10+ | NT$50.040 |
| 100+ | NT$39.640 |
| 500+ | NT$38.850 |
| 1000+ | NT$38.060 |
| 5000+ | NT$37.270 |
價格Each
最少: 1
多項: 1
NT$86.75
品項附註
僅針對此訂單新增至訂單確認、發票和出貨備註。
產品訊息
製造商ONSEMI
製造商產品編號FDPF55N06复制
製造商標準前置時間22 週
訂購代碼3003956
Product RangeUniFET
技術資料表
Channel TypeN Channel
Drain Source Voltage Vds60V
Continuous Drain Current Id55A
Drain Source On State Resistance0.018ohm
Transistor Case StyleTO-220F
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4V
Power Dissipation48W
No. of Pins3Pins
Operating Temperature Max150°C
Product RangeUniFET
Qualification-
SVHCNo SVHC (25-Jun-2025)
產品總覽
The FDPF55N06 is tailored ti reduce in-state resistance and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factorfactor correction (PFC), flat panel display (FPD) TV power. ATX and electronic lamp ballasts.
技術規格
Channel Type
N Channel
Continuous Drain Current Id
55A
Transistor Case Style
TO-220F
Rds(on) Test Voltage
10V
Power Dissipation
48W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Drain Source Voltage Vds
60V
Drain Source On State Resistance
0.018ohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
4V
No. of Pins
3Pins
Product Range
UniFET
MSL
MSL 1 - Unlimited
法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：Y-Ex
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (25-Jun-2025)
下載產品合規憑證
產品合規憑證
重量 (公斤)：.0005