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FDS3672
Power MOSFET, N Channel, 100 V, 7.5 A, 0.019 ohm, SOIC, Surface Mount
產品訊息
製造商ONSEMI
製造商產品編號FDS3672
訂購代碼1495207
技術資料表
Channel TypeN Channel
Drain Source Voltage Vds100V
Continuous Drain Current Id7.5A
Drain Source On State Resistance0.019ohm
Transistor Case StyleSOIC
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4V
Power Dissipation2.5mW
No. of Pins8Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
SVHCNo SVHC (27-Jun-2024)
產品總覽
The FDS3672 is a N-channel MOSFET produced using PowerTrench® process. It is suitable for high voltage synchronous rectifier, DC-to-DC converters and off-line UPS, distributed power architectures and VRMs, primary switch for 24 and 48V systems.
- Low miller charge
- Low QRR body diode
- Optimized efficiency at high frequencies
- UIS Capability (single pulse and repetitive pulse)
技術規格
Channel Type
N Channel
Continuous Drain Current Id
7.5A
Transistor Case Style
SOIC
Rds(on) Test Voltage
10V
Power Dissipation
2.5mW
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (27-Jun-2024)
Drain Source Voltage Vds
100V
Drain Source On State Resistance
0.019ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
4V
No. of Pins
8Pins
Product Range
-
MSL
-
FDS3672 的替代選擇
找到 2 個產品
法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
關稅編號：85412100
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (27-Jun-2024)
下載產品合規憑證
產品合規憑證
重量 (公斤)：.000227