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FDS4465.
Power MOSFET, P Channel, 20 V, 13.5 A, 8500 µohm, SOIC, Surface Mount
10 有存貨
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10 件可于 3-4 個工作日後配送(英國 件庫存)
包裝選項
| 包裝類型 | 數量 | 單價: | 總計 |
|---|---|---|---|
| 條帶式包裝 | 1 | NT$64.670 | NT$64.67 |
| 總計 價格 | NT$64.67 | ||
條帶式包裝 & 複捲式
| 數量 | 價格 |
|---|---|
| 1+ | NT$64.670 |
| 10+ | NT$40.060 |
| 100+ | NT$28.300 |
| 500+ | NT$22.460 |
| 1000+ | NT$22.020 |
| 5000+ | NT$21.570 |
品項附註
僅針對此訂單新增至訂單確認、發票和出貨備註。
產品訊息
製造商ONSEMI
製造商產品編號FDS4465.
訂購代碼
複捲式1471051RL
條帶式包裝1471051
技術資料表
Channel TypeP Channel
Drain Source Voltage Vds20V
Continuous Drain Current Id13.5A
Drain Source On State Resistance8500µohm
Transistor Case StyleSOIC
Transistor MountingSurface Mount
Rds(on) Test Voltage4.5V
Gate Source Threshold Voltage Max600mV
Power Dissipation2.5W
No. of Pins8Pins
Operating Temperature Max175°C
Product Range-
Qualification-
SVHCNo SVHC (25-Jun-2025)
產品總覽
The FDS4465 is a P-channel MOSFET produced using rugged gate version of advanced PowerTrench® process. It has been optimized for power management applications with a wide range of gate drive voltage (1.8 to 8V). It is suitable for load switch and battery protection application.
- Fast switching speed
- High performance Trench technology for extremely low RDS (ON)
- High current and power handling capability
技術規格
Channel Type
P Channel
Continuous Drain Current Id
13.5A
Transistor Case Style
SOIC
Rds(on) Test Voltage
4.5V
Power Dissipation
2.5W
Operating Temperature Max
175°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Drain Source Voltage Vds
20V
Drain Source On State Resistance
8500µohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
600mV
No. of Pins
8Pins
Product Range
-
MSL
MSL 1 - Unlimited
FDS4465. 的替代選擇
找到 2 個產品
法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：Taiwan
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：Taiwan
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (25-Jun-2025)
下載產品合規憑證
產品合規憑證
重量 (公斤)：.000214