列印頁面
FDS4470
Power MOSFET, N Channel, 40 V, 12.5 A, 9000 µohm, SOIC, Surface Mount
2,298 有存貨
需要更多？
2,298 件可于 3-4 個工作日後配送(英國 件庫存)
存貨供應完畢便停止銷售
| 數量 | 價格 |
|---|---|
| 5+ | NT$43.790 |
| 50+ | NT$40.410 |
| 100+ | NT$39.210 |
| 500+ | NT$37.900 |
| 1000+ | NT$36.900 |
價格Each (Supplied on Cut Tape)
最少: 5
多項: 5
NT$218.95
品項附註
僅針對此訂單新增至訂單確認、發票和出貨備註。
產品訊息
製造商ONSEMI
製造商產品編號FDS4470复制
製造商標準前置時間54 週
訂購代碼2453416
技術資料表
Channel TypeN Channel
Drain Source Voltage Vds40V
Continuous Drain Current Id12.5A
Drain Source On State Resistance9000µohm
Transistor Case StyleSOIC
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max3.9V
Power Dissipation2.5W
No. of Pins8Pins
Operating Temperature Max175°C
Product Range-
Qualification-
SVHCNo SVHC (27-Jun-2024)
產品總覽
The FDS4470 is a N-channel MOSFET produced using PowerTrench® process. It is designed specifically to improve the overall efficiency of DC-to-DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS (ON) and fast switching speed.
- High performance Trench technology for extremely low RDS (ON)
- High power and current handling capability
- 45nC low gate charge
技術規格
Channel Type
N Channel
Continuous Drain Current Id
12.5A
Transistor Case Style
SOIC
Rds(on) Test Voltage
10V
Power Dissipation
2.5W
Operating Temperature Max
175°C
Qualification
-
SVHC
No SVHC (27-Jun-2024)
Drain Source Voltage Vds
40V
Drain Source On State Resistance
9000µohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
3.9V
No. of Pins
8Pins
Product Range
-
MSL
MSL 1 - Unlimited
相關產品
找到 1 個產品
法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (27-Jun-2024)
下載產品合規憑證
產品合規憑證
重量 (公斤)：.000187