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FDS8880
Power MOSFET, N Channel, 30 V, 11.6 A, 0.01 ohm, SOIC, Surface Mount
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65 件可于 3-4 個工作日後配送(英國 件庫存)
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| 數量 | 價格 |
|---|---|
| 5+ | NT$24.010 |
| 50+ | NT$17.800 |
| 100+ | NT$15.800 |
| 500+ | NT$15.490 |
| 1000+ | NT$15.170 |
價格Each (Supplied on Cut Tape)
最少: 5
多項: 5
NT$120.05
品項附註
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產品訊息
製造商ONSEMI
製造商產品編號FDS8880复制
製造商標準前置時間54 週
訂購代碼1700669
技術資料表
Channel TypeN Channel
Drain Source Voltage Vds30V
Continuous Drain Current Id11.6A
Drain Source On State Resistance0.01ohm
Transistor Case StyleSOIC
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2.5V
Power Dissipation2.5W
No. of Pins8Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (25-Jun-2025)
FDS8880 的替代選擇
找到 3 個產品
產品總覽
The FDS8880 is a N-channel MOSFET produced using PowerTrench® process. It has been designed specifically to improve the overall efficiency of DC-to-DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS (ON) and fast switching speed.
- High performance Trench technology for extremely low RDS (ON)
- Low gate charge
- High power and current handling capability
技術規格
Channel Type
N Channel
Continuous Drain Current Id
11.6A
Transistor Case Style
SOIC
Rds(on) Test Voltage
10V
Power Dissipation
2.5W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Drain Source Voltage Vds
30V
Drain Source On State Resistance
0.01ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
2.5V
No. of Pins
8Pins
Product Range
-
MSL
MSL 1 - Unlimited
法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (25-Jun-2025)
下載產品合規憑證
產品合規憑證
重量 (公斤)：.000213