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FDT457N
Power MOSFET, N Channel, 30 V, 5 A, 0.06 ohm, SOT-223, Surface Mount
產品訊息
製造商ONSEMI
製造商產品編號FDT457N
訂購代碼2464126
技術資料表
Channel TypeN Channel
Drain Source Voltage Vds30V
Continuous Drain Current Id5A
Drain Source On State Resistance0.06ohm
Transistor Case StyleSOT-223
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max3V
Power Dissipation3W
No. of Pins4Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
SVHCLead (23-Jan-2024)
產品總覽
The FDT457N is a 30V N-channel enhancement mode Field Effect Transistor produced using high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance, provide superior switching performance. It is well suited to low voltage, low current applications such as notebook computer power management, battery powered circuits and DC motor control. This product is general usage and suitable for many different applications.
- High density cell design for extremely low RDS (ON)
- High power and current handling capability
- ±20V continuous gate source voltage (VGSS)
- 42°C/W Thermal resistance, junction to ambient
- 12°C/W thermal resistance, junction to case
技術規格
Channel Type
N Channel
Continuous Drain Current Id
5A
Transistor Case Style
SOT-223
Rds(on) Test Voltage
10V
Power Dissipation
3W
Operating Temperature Max
150°C
Qualification
-
SVHC
Lead (23-Jan-2024)
Drain Source Voltage Vds
30V
Drain Source On State Resistance
0.06ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
3V
No. of Pins
4Pins
Product Range
-
MSL
-
FDT457N 的替代選擇
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原產地：
承擔產品生產最後程序之國家原產地：Philippines
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：Philippines
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：Y-Ex
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:Lead (23-Jan-2024)
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產品合規憑證
重量 (公斤)：.000274