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FQP11N40C
Power MOSFET, N Channel, 400 V, 10.5 A, 0.43 ohm, TO-220AB, Through Hole
261 有存貨
1,000 即日起您可預購補貨
261 件可于 3-4 個工作日後配送(英國 件庫存)
| 數量 | 價格 |
|---|---|
| 1+ | NT$80.520 |
| 10+ | NT$48.190 |
| 100+ | NT$41.400 |
| 500+ | NT$40.580 |
| 1000+ | NT$39.750 |
| 5000+ | NT$38.920 |
價格Each
最少: 1
多項: 1
NT$80.52
品項附註
僅針對此訂單新增至訂單確認、發票和出貨備註。
產品訊息
製造商ONSEMI
製造商產品編號FQP11N40C复制
製造商標準前置時間45 週
訂購代碼2453436
技術資料表
Channel TypeN Channel
Drain Source Voltage Vds400V
Continuous Drain Current Id10.5A
Drain Source On State Resistance0.43ohm
Transistor Case StyleTO-220AB
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4V
Power Dissipation135W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCLead (25-Jun-2025)
產品總覽
The FQP11N40C is a QFET® N-channel enhancement-mode Power MOSFET produced using planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce ON-state resistance, provide superior switching performance and high avalanche energy strength. It is suitable for switched mode power supplies, active power factor correction (PFC) and electronic lamp ballasts.
- 100% avalanche tested
- 28nC typical low gate charge
- 85pF typical low Crss
技術規格
Channel Type
N Channel
Continuous Drain Current Id
10.5A
Transistor Case Style
TO-220AB
Rds(on) Test Voltage
10V
Power Dissipation
135W
Operating Temperature Max
150°C
Qualification
-
SVHC
Lead (25-Jun-2025)
Drain Source Voltage Vds
400V
Drain Source On State Resistance
0.43ohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
4V
No. of Pins
3Pins
Product Range
-
MSL
MSL 1 - Unlimited
FQP11N40C 的替代選擇
找到 2 個產品
法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：Y-Ex
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:Lead (25-Jun-2025)
下載產品合規憑證
產品合規憑證
重量 (公斤)：.036287