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FQP13N06L
Power MOSFET, N Channel, 60 V, 13.6 A, 0.088 ohm, TO-220AB, Through Hole
不再生產
產品訊息
製造商ONSEMI
製造商產品編號FQP13N06L复制
訂購代碼2453437
技術資料表
Channel TypeN Channel
Drain Source Voltage Vds60V
Continuous Drain Current Id13.6A
Drain Source On State Resistance0.088ohm
Transistor Case StyleTO-220AB
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2.5V
Power Dissipation45W
No. of Pins3Pins
Operating Temperature Max175°C
Product Range-
Qualification-
SVHCLead (17-Jan-2022)
產品總覽
The FQP13N06L is a QFET® N-channel enhancement-mode Power MOSFET produced using planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce ON-state resistance, provide superior switching performance and high avalanche energy strength. It is suitable for switched mode power supplies, audio amplifier and variable switching power applications.
- 100% avalanche tested
- 4.8nC typical low gate charge
- 17pF typical low Crss
警告
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
技術規格
Channel Type
N Channel
Continuous Drain Current Id
13.6A
Transistor Case Style
TO-220AB
Rds(on) Test Voltage
10V
Power Dissipation
45W
Operating Temperature Max
175°C
Qualification
-
SVHC
Lead (17-Jan-2022)
Drain Source Voltage Vds
60V
Drain Source On State Resistance
0.088ohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
2.5V
No. of Pins
3Pins
Product Range
-
MSL
MSL 1 - Unlimited
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法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：Y-Ex
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:Lead (17-Jan-2022)
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重量 (公斤)：.003629