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| 數量 | 價格 |
|---|---|
| 1+ | NT$94.880 |
| 10+ | NT$47.120 |
| 100+ | NT$41.260 |
| 500+ | NT$40.440 |
| 1000+ | NT$39.610 |
| 5000+ | NT$38.790 |
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最少: 1
多項: 1
NT$94.88
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產品訊息
製造商ONSEMI
製造商產品編號FQP27P06复制
製造商標準前置時間15 週
訂購代碼9846530
技術資料表
Channel TypeP Channel
Drain Source Voltage Vds60V
Continuous Drain Current Id27A
Drain Source On State Resistance0.07ohm
Transistor Case StyleTO-220
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4V
Power Dissipation120W
No. of Pins3Pins
Operating Temperature Max175°C
Product Range-
Qualification-
MSL-
SVHCLead (25-Jun-2025)
產品總覽
The FQP27P06 is a through hole, -60V P channel QFET MOSFET in TO-220 package. This device feature planar stripe and DMOS technology which has been tailored to minimize the onstate resistance and provide superior switching performance and high avalanche energy strength. It is suitable for switched mode power supply, audio amplifier, DC motor control and variable switching power applications.
- Low reverse transfer capacitance of typically 120pF
- Low gate charge is typically 33nC
- Drain to source voltage (Vds) of -60V
- Gate to source voltage of ±25V
- Continuous drain current (Id) of -27A
- Power dissipation (Pd) of 120W
- Low on state resistance of 55mohm at Vgs -10V
- Operating temperature range -55°C to 175°C
技術規格
Channel Type
P Channel
Continuous Drain Current Id
27A
Transistor Case Style
TO-220
Rds(on) Test Voltage
10V
Power Dissipation
120W
Operating Temperature Max
175°C
Qualification
-
SVHC
Lead (25-Jun-2025)
Drain Source Voltage Vds
60V
Drain Source On State Resistance
0.07ohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
4V
No. of Pins
3Pins
Product Range
-
MSL
-
FQP27P06 的替代選擇
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法規與環境保護
原產地:
承擔產品生產最後程序之國家原產地:China
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地:China
承擔產品生產最後程序之國家
關稅編號:85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定:Y-Ex
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:Lead (25-Jun-2025)
下載產品合規憑證
產品合規憑證
重量 (公斤):.00279

