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FQP7P06
Power MOSFET, P Channel, 60 V, 7 A, 0.41 ohm, TO-220, Through Hole
不再生產
產品訊息
製造商ONSEMI
製造商產品編號FQP7P06复制
訂購代碼9846557
技術資料表
Channel TypeP Channel
Drain Source Voltage Vds60V
Continuous Drain Current Id7A
Drain Source On State Resistance0.41ohm
Transistor Case StyleTO-220
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4V
Power Dissipation45W
No. of Pins3Pins
Operating Temperature Max175°C
Product Range-
Qualification-
MSL-
SVHCLead (17-Jan-2022)
產品總覽
The FQP7P06 is a -60V P-channel QFET® enhancement mode Power MOSFET is produced using planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance and to provide superior switching performance and high avalanche energy strength. This product is general usage and suitable for many different applications.
- Low gate charge
- 100% avalanche tested
- Improved system reliability in PFC and soft switching topologies
- Switching loss improvements
- Lower conduction loss
- 175°C maximum junction temperature rating
技術規格
Channel Type
P Channel
Continuous Drain Current Id
7A
Transistor Case Style
TO-220
Rds(on) Test Voltage
10V
Power Dissipation
45W
Operating Temperature Max
175°C
Qualification
-
SVHC
Lead (17-Jan-2022)
Drain Source Voltage Vds
60V
Drain Source On State Resistance
0.41ohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
4V
No. of Pins
3Pins
Product Range
-
MSL
-
相關產品
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法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：Y-Ex
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:Lead (17-Jan-2022)
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重量 (公斤)：.002