列印頁面
FQPF2N60C
Power MOSFET, N Channel, 600 V, 2 A, 4.7 ohm, TO-220F, Through Hole
不再生產
產品訊息
製造商ONSEMI
製造商產品編號FQPF2N60C复制
訂購代碼1095084
技術資料表
Channel TypeN Channel
Drain Source Voltage Vds600V
Continuous Drain Current Id2A
Drain Source On State Resistance4.7ohm
Transistor Case StyleTO-220F
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4V
Power Dissipation23W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
產品總覽
The FQPF2N60C is a N-channel QFET® enhancement-mode power MOSFET produced using planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce ON-state resistance and to provide superior switching performance and high avalanche energy strength. This device is suitable for switched mode power supplies, active power factor correction (PFC) and electronic lamp ballasts.
- Low gate charge (8.5nC)
- Low Crss (4.3pF)
- 100% avalanche tested
附註
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
技術規格
Channel Type
N Channel
Continuous Drain Current Id
2A
Transistor Case Style
TO-220F
Rds(on) Test Voltage
10V
Power Dissipation
23W
Operating Temperature Max
150°C
Qualification
-
Drain Source Voltage Vds
600V
Drain Source On State Resistance
4.7ohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
4V
No. of Pins
3Pins
Product Range
-
相關產品
找到 3 個產品
法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
關稅編號：85423990
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：Y-Ex
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
下載產品合規憑證
產品合規憑證
重量 (公斤)：.002105