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HGT1S10N120BNST
IGBT, 35 A, 2.45 V, 298 W, 1.2 kV, TO-263AB, 3 Pins
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產品訊息
製造商ONSEMI
製造商產品編號HGT1S10N120BNST复制
訂購代碼
複捲式2454176RL
條帶式包裝2454176
技術資料表
Continuous Collector Current35A
Collector Emitter Saturation Voltage2.45V
Power Dissipation298W
Collector Emitter Voltage Max1.2kV
Transistor Case StyleTO-263AB
No. of Pins3Pins
Operating Temperature Max150°C
Transistor MountingSurface Mount
Product Range-
SVHCLead (25-Jun-2025)
產品總覽
The HGT1S10N120BNST is a N-channel Non-punch Through (NPT) IGBT ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as UPS and solar inverter. It is new member of the MOS gated high voltage switching IGBT family. It combines the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low ON-state conduction loss of a bipolar transistor.
- Short-circuit rating
- Avalanche rated
- 2.45V @ IC = 10A Low saturation voltage
- 140ns Fall time @ TJ = 150°C
- 298W Total power dissipation @ TC = 25°C
應用
Power Management, Motor Drive & Control
警告
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
技術規格
Continuous Collector Current
35A
Power Dissipation
298W
Transistor Case Style
TO-263AB
Operating Temperature Max
150°C
Product Range
-
SVHC
Lead (25-Jun-2025)
Collector Emitter Saturation Voltage
2.45V
Collector Emitter Voltage Max
1.2kV
No. of Pins
3Pins
Transistor Mounting
Surface Mount
MSL
MSL 1 - Unlimited
相關產品
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法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：Y-Ex
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:Lead (25-Jun-2025)
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產品合規憑證
重量 (公斤)：.001312