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| 包裝類型 | 數量 | 單價: | 總計 |
|---|---|---|---|
| 條帶式包裝 | 1 | NT$14.800 | NT$14.80 |
| 總計 價格 | NT$14.80 | ||
| 數量 | 價格 |
|---|---|
| 1+ | NT$14.800 |
| 10+ | NT$10.430 |
| 100+ | NT$7.780 |
| 500+ | NT$7.110 |
| 1000+ | NT$6.980 |
| 2500+ | NT$6.820 |
| 5000+ | NT$6.690 |
產品訊息
產品總覽
The MC33172DR2G is a low power monolithic dual Operational Amplifier operates at 180μA per amplifier and offer 1.8MHz of gain bandwidth product and 2.1V/μs slew rate without the use of JFET device technology. Although this series can be operated from split supplies, it is particularly suited for single supply operation, since the common-mode input voltage includes ground potential (VEE). With a Darlington input stage, this device exhibit high input resistance, low input offset voltage and high gain. The all NPN output stage, characterized by no dead-band crossover distortion and large output voltage swing, provides high capacitance drive capability, excellent phase and gain margins, low open loop high frequency output impedance and symmetrical source/sink AC frequency response.
- Output short-circuit protection
- Wide input common mode range, including ground (VEE)
- 2mV Low input offset voltage
- 0 to 500pF Large capacitance drive capability
- 0.03% Low total harmonic distortion
- 60° Excellent phase margin
- 15dB Excellent gain margin
應用
Industrial, Automotive
技術規格
2Channels
2.1V/µs
SOIC
Low Power
2mV
Surface Mount
85°C
-
No SVHC (25-Jun-2025)
-
2 Amplifier
1.8MHz
± 1.5V to ± 22V
8Pins
-
20nA
-40°C
-
-
SOIC
1.8MHz
2.1V/µs
MC33172DR2G 的替代選擇
找到 3 個產品
法規與環境保護
承擔產品生產最後程序之國家原產地:Philippines
承擔產品生產最後程序之國家
RoHS
RoHS
產品合規憑證
