列印頁面
MJB42CT4G
Bipolar (BJT) Single Transistor, PNP, 100 V, 6 A, 65 W, TO-263 (D2PAK), Surface Mount
產品訊息
製造商ONSEMI
製造商產品編號MJB42CT4G
訂購代碼2464114
技術資料表
Transistor PolarityPNP
Collector Emitter Voltage Max100V
Continuous Collector Current6A
Power Dissipation65W
Transistor Case StyleTO-263 (D2PAK)
Transistor MountingSurface Mount
No. of Pins3Pins
Transition Frequency3MHz
DC Current Gain hFE Min15hFE
Operating Temperature Max150°C
Product Range-
Qualification-
MSLMSL 1 - Unlimited
SVHCLead (27-Jun-2024)
技術規格
Transistor Polarity
PNP
Continuous Collector Current
6A
Transistor Case Style
TO-263 (D2PAK)
No. of Pins
3Pins
DC Current Gain hFE Min
15hFE
Product Range
-
MSL
MSL 1 - Unlimited
Collector Emitter Voltage Max
100V
Power Dissipation
65W
Transistor Mounting
Surface Mount
Transition Frequency
3MHz
Operating Temperature Max
150°C
Qualification
-
SVHC
Lead (27-Jun-2024)
法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：Y-Ex
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:Lead (27-Jun-2024)
下載產品合規憑證
產品合規憑證
重量 (公斤)：.001