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MJB44H11G
Bipolar (BJT) Single Transistor, NPN, 80 V, 10 A, 50 W, TO-263 (D2PAK), Surface Mount
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| 數量 | 價格 |
|---|---|
| 1+ | NT$36.290 |
| 10+ | NT$32.660 |
| 100+ | NT$29.030 |
| 500+ | NT$25.390 |
| 1000+ | NT$21.760 |
| 5000+ | NT$18.120 |
價格Each
最少: 1
多項: 1
NT$36.29
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產品訊息
製造商ONSEMI
製造商產品編號MJB44H11G
訂購代碼2535625
技術資料表
Transistor PolarityNPN
Collector Emitter Voltage Max80V
Continuous Collector Current10A
Power Dissipation50W
Transistor Case StyleTO-263 (D2PAK)
Transistor MountingSurface Mount
No. of Pins3Pins
Transition Frequency50MHz
DC Current Gain hFE Min40hFE
Operating Temperature Max150°C
Product Range-
QualificationAEC-Q101
MSLMSL 1 - Unlimited
SVHCLead (27-Jun-2024)
產品總覽
The MJB44H11G is a 80V NPN complementary Power Transistor designed for general purpose power amplification and switching such as output or driver stages in applications such as switching regulators, converters and power amplifiers.
- Low collector to emitter saturation voltage (VCE (sat) = 1V maximum at 8A)
- Fast switching speeds
- Complementary pairs simplifies designs
- ESD rating - 3B <gt/> 8000V human body model, C <gt/> 400V machine model
- 5V Emitter to base voltage (VEBO)
- 2.5°C/W Thermal resistance, junction to case
- 7.5°C/W Thermal resistance, junction to ambient
應用
Industrial, Power Management
技術規格
Transistor Polarity
NPN
Continuous Collector Current
10A
Transistor Case Style
TO-263 (D2PAK)
No. of Pins
3Pins
DC Current Gain hFE Min
40hFE
Product Range
-
MSL
MSL 1 - Unlimited
Collector Emitter Voltage Max
80V
Power Dissipation
50W
Transistor Mounting
Surface Mount
Transition Frequency
50MHz
Operating Temperature Max
150°C
Qualification
AEC-Q101
SVHC
Lead (27-Jun-2024)
MJB44H11G 的替代選擇
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法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：Malaysia
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：Malaysia
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：Y-Ex
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:Lead (27-Jun-2024)
下載產品合規憑證
產品合規憑證
重量 (公斤)：.00229