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MJD200T4G
Bipolar (BJT) Single Transistor, NPN, 25 V, 5 A, 12.5 W, TO-252 (DPAK), Surface Mount
產品訊息
製造商ONSEMI
製造商產品編號MJD200T4G
訂購代碼2464109
技術資料表
Transistor PolarityNPN
Collector Emitter Voltage Max25V
Continuous Collector Current5A
Power Dissipation12.5W
Transistor Case StyleTO-252 (DPAK)
Transistor MountingSurface Mount
No. of Pins3Pins
Transition Frequency65MHz
DC Current Gain hFE Min70hFE
Operating Temperature Max150°C
Product Range-
Qualification-
MSLMSL 1 - Unlimited
SVHCLead (27-Jun-2024)
技術規格
Transistor Polarity
NPN
Continuous Collector Current
5A
Transistor Case Style
TO-252 (DPAK)
No. of Pins
3Pins
DC Current Gain hFE Min
70hFE
Product Range
-
MSL
MSL 1 - Unlimited
Collector Emitter Voltage Max
25V
Power Dissipation
12.5W
Transistor Mounting
Surface Mount
Transition Frequency
65MHz
Operating Temperature Max
150°C
Qualification
-
SVHC
Lead (27-Jun-2024)
相關產品
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法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：Y-Ex
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:Lead (27-Jun-2024)
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產品合規憑證
重量 (公斤)：.000526