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MJE13007G
Bipolar (BJT) Single Transistor, General Purpose, NPN, 400 V, 8 A, 80 W, TO-220, Through Hole
3,563 有存貨
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55 件可于 1-2 個工作日後配送(新加坡 件庫存)
3508 件可于 3-4 個工作日後配送(英國 件庫存)
| 數量 | 價格 |
|---|---|
| 1+ | NT$59.920 |
| 10+ | NT$27.380 |
| 100+ | NT$26.840 |
| 500+ | NT$26.290 |
| 1000+ | NT$25.740 |
| 5000+ | NT$25.190 |
價格Each
最少: 1
多項: 1
NT$59.92
品項附註
僅針對此訂單新增至訂單確認、發票和出貨備註。
產品訊息
製造商ONSEMI
製造商產品編號MJE13007G
訂購代碼9557857
技術資料表
Transistor PolarityNPN
Collector Emitter Voltage Max400V
Continuous Collector Current8A
Power Dissipation80W
Transistor Case StyleTO-220
Transistor MountingThrough Hole
No. of Pins3Pins
Transition Frequency14MHz
DC Current Gain hFE Min4hFE
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
SVHCLead (25-Jun-2025)
產品總覽
The MJE13007G is a Silicon NPN Bipolar Power Transistor designed for high voltage and high speed power switching inductive circuits where fall time is critical. It is particularly suited for 115 and 220V switch mode applications such as switching regulators, inverters, motor controls, solenoid/relay drivers and deflection circuits.
- SOA and switching applications
- Collector-base voltage (Vcbo = 700V)
- Emitter-base voltage (Vcbo = 9V)
應用
Power Management, Motor Drive & Control, Industrial
技術規格
Transistor Polarity
NPN
Continuous Collector Current
8A
Transistor Case Style
TO-220
No. of Pins
3Pins
DC Current Gain hFE Min
4hFE
Product Range
-
MSL
-
Collector Emitter Voltage Max
400V
Power Dissipation
80W
Transistor Mounting
Through Hole
Transition Frequency
14MHz
Operating Temperature Max
150°C
Qualification
-
SVHC
Lead (25-Jun-2025)
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原產地：
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：Y-Ex
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:Lead (25-Jun-2025)
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重量 (公斤)：.002041